STL19N60M6

Single FETs, MOSFETs Overview

The STL19N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET featuring a typical on-resistance of 255 mOhm and a continuous drain current of 11 A. It is housed in a compact PowerFLAT 8x8 HV package designed for high-efficiency power conversion applications.

Single FETs, MOSFETs Feature Summary

• MDmesh M6 technology provides reduced switching losses and lower RDS(on) per area compared to previous generations.
• Features low gate input resistance for user-friendly driving experiences.
• Includes integrated Zener protection between gate and source terminals.
• Subjected to 100% avalanche testing to ensure robustness under stress conditions.

Single FETs, MOSFETs Applications

• Switching applications
• LLC converters
• Boost PFC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to confirm package type and electrical ratings. Ensure compatibility with the target application's thermal and voltage requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in resonant topologies. The MDmesh M6 technology offers improved performance over prior generations, making it suitable for modern power supply architectures demanding compact form factors.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh M6 family of Super Junction MOSFETs from STMicroelectronics. It represents an advancement in high-voltage power switching technology, focusing on optimizing the balance between conduction and switching losses for enhanced system efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives within the MDmesh series. Verify pinout and thermal characteristics when considering cross-references to ensure functional equivalence in the final design.