T560N14TOFXPSA1

T560N14TOFXPSA1

  • Description:SCR MODULE 1800V 809A DO200AA
  • Series:-

SKU:6e152ea6034d Category: Brand:

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Product Detailed Parameters

  • Description:SCR MODULE 1800V 809A DO200AA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Structure:Single
  • Number of SCRs, Diodes:1 SCR
  • Voltage - Off State:1.8 kV
  • Current - On State (It (AV)) (Max):559 A
  • Current - On State (It (RMS)) (Max):809 A
  • Current - Non Rep. Surge 50, 60Hz (Itsm):8000A @ 50Hz
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Clamp On
  • Package / Case:DO-200AA, A-PUK
  • Voltage - Gate Trigger (Vgt) (Max):2 V
  • Current - Gate Trigger (Igt) (Max):200 mA
  • Current - Hold (Ih) (Max):300 mA
  • Grade:-
  • Qualification:-

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T560N14TOFXPSA1

Overview

The Infineon T560N14TOFXPSA1 is an electrically triggered phase control thyristor disc module designed for high-power industrial applications. It features a repetitive peak reverse voltage of 1400 V and an average on-state current rating of 559 A at 180° electrical sine wave conduction. The device supports a surge current capacity of 6900 A for 10 ms duration and has a maximum junction temperature of 125°C. Key electrical parameters include a peak on-state voltage of 1.92 V at 1.6 kA, a gate trigger current of up to 200 mA, and a holding current of 300 mA. The component utilizes a ceramic-insulated disc package with dimensions of 48 mm diameter and 14 mm height, requiring a clamping force between 5 and 10 kN.

Feature Summary

  • Electrically triggered phase control topology for precise power regulation
  • High short-circuit capability with guaranteed failure mode safety
  • Ceramic insulated disc construction for robust thermal management

Applications

  • Industrial motor drives and variable speed controls
  • HVDC transmission and static var compensators
  • Electrolysis and rectifier plant systems

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and testing configurations. Confirm that the required clamping hardware matches the specified 5 to 10 kN force range. Check for updated technical information sheets regarding bipolar semiconductors to ensure compatibility with existing gate drive circuits and thermal interface materials.

Selection Notes

Select this component when a 1400 V blocking voltage and approximately 560 A continuous current are required in a disc form factor. Ensure the application can accommodate the 200 mA maximum gate trigger current and 2 V gate trigger voltage limits. Verify that the system design allows for the specified 250 µs turn-off time and that thermal resistance constraints align with the 44 K/kW junction-to-case value.

Part Context

This part belongs to the T560N series of high-power thyristor discs manufactured by Infineon Technologies. It shares the same physical footprint and general electrical characteristics with variants offering different voltage ratings, such as the T560N16TOF and T560N18TOF. The TOFXPSA1 designation indicates a specific configuration within the standard phase control thyristor product line.

Replacement Considerations

Direct replacements include the T560N14TOF and T560N14TOFXPSA1 (same part). For higher voltage requirements, consider the T560N16TOF or T560N18TOF if the circuit design permits. Lower current alternatives like the T430N14TOF may be suitable if thermal and current margins allow.

T560N14TOFXPSA1T560N14TOFXPSA1

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