TIP112 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor TIP112 TIN/LEAD is a silicon NPN epitaxial-base transistor in a monolithic Darlington configuration. It is housed in a TO-220 plastic package with tin/lead plating. The device features an integrated antiparallel collector-emitter diode and is designed for medium power linear and switching applications.

Single Bipolar Transistors Feature Summary

• Monolithic Darlington configuration
• Integrated antiparallel collector-emitter diode
• NPN polarity

Single Bipolar Transistors Applications

• Medium power linear applications
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify current availability status as the component may be subject to discontinuation notices. Confirm that the specific ordering suffix matches the required tin/lead plating specification. Check for any inventory limitations or special order requirements directly with the manufacturer before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN Darlington transistor is required for medium power tasks. Ensure the TO-220 package fits the thermal and mechanical constraints of the design. Verify compatibility with the integrated collector-emitter diode function within the circuit topology.

Single Bipolar Transistors Part Context

This part belongs to the TIP11x series of Darlington transistors manufactured by Central Semiconductor Corp. It serves as the NPN counterpart to the PNP TIP117. The series is intended for general-purpose power amplification and switching duties where high current gain is beneficial.

Single Bipolar Transistors Replacement Considerations

Official documentation indicates that the TIP110, TIP111, TIP115, and TIP116 are discontinued and suggests the TIP112 and TIP117 as replacements respectively. No direct substitute is listed for the TIP112 itself.