TK10A60W,S4X

$1.24

Description：MOSFET N-CH 600V 9.7A TO220
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:5d14f2665c37 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK10A60W,S4X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 9.7A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK10A60W,S4X

Description：MOSFET N-CH 600V 9.7A TO220
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK10A60W,S4X

TK10A60W,S4X

Single FETs, MOSFETs Overview

The TK10A60W,S4X is a silicon N-channel MOSFET from Toshiba's DTMOS IV series, housed in a TO-220SIS package. It features a 600 V drain-source voltage rating and a continuous drain current of 9.7 A at 25°C. The device utilizes a Super Junction structure to achieve a typical on-resistance of 0.327 Ω. Key electrical parameters include a gate threshold voltage range of 2.7 V to 3.7 V, a maximum power dissipation of 30 W at case temperature, and an isolation voltage of 2000 V RMS.

Single FETs, MOSFETs Feature Summary

Employs a Super Junction Structure (DTMOS) for low on-resistance
Features enhanced mode operation with defined gate threshold voltage
Provides high channel-to-case isolation voltage capability

Single FETs, MOSFETs Applications

Switching Voltage Regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component is sourced from authorized distributors to ensure authenticity and traceability. Review the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching capabilities within a through-hole form factor. Consider the thermal resistance values when designing heat dissipation strategies, as the device supports up to 30 W of power dissipation under specific mounting conditions. Ensure the driving circuit can accommodate the specified gate charge and threshold voltage levels for reliable enhancement mode operation.

Single FETs, MOSFETs Part Context

This part belongs to the TK10A60W family of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is part of the DTMOS IV product line, which leverages Super Junction technology to optimize performance metrics like on-resistance and switching efficiency compared to traditional planar structures.

Single FETs, MOSFETs Replacement Considerations

Consult the official Toshiba replacement guide or contact technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics.