TRS30N120HB,S1Q

Diode Arrays Overview

The TRS30N120HB,S1Q is a silicon carbide Schottky barrier diode manufactured by Toshiba. It features a common anode configuration with two legs in a TO-247 package. The device supports a repetitive peak reverse voltage of 1200 V and a forward DC current of 15 A per leg or 30 A for both legs at Tc = 150 °C. Key electrical parameters include a typical forward voltage of 1.27 V, a total capacitive charge of 80 nC per leg, and a reverse current of 1.4 µA. It operates within a junction temperature range of -55 °C to +175 °C.

Diode Arrays Feature Summary

• Third-generation chip design
• Low forward voltage characteristics
• Reduced total capacitive charge
• Minimal reverse leakage current

Diode Arrays Applications

• Power Factor Correction
• Solar Inverters
• Uninterruptible Power Supplies
• DC-DC Converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status and marking details. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values. Ensure application designs account for the absolute maximum ratings provided in the datasheet to maintain long-term reliability under heavy loads.

Diode Arrays Selection Notes

Select this component for high-efficiency power conversion circuits requiring low switching losses and robust surge handling. The dual-leg common anode structure simplifies circuit topology for center-tapped or bridge configurations. Evaluate thermal dissipation needs based on the specified power dissipation limits and thermal resistance characteristics for the target operating environment.

Diode Arrays Part Context

This part belongs to the Toshiba TRSx series of silicon carbide Schottky barrier diodes. These devices utilize wide band-gap material technology to achieve high voltage ratings and improved performance compared to traditional silicon rectifiers. The series is designed for modern power electronics applications demanding higher efficiency and compact form factors.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-referencing with other manufacturers requires careful validation of pinout compatibility, thermal characteristics, and electrical ratings to ensure system integrity.

Diode Arrays FAQ

What is the internal circuit configuration of the TRS30N120HB?

The device features a common anode configuration with two independent cathodes (legs) housed in a single TO-247 package.

How does the third-generation chip design impact performance?

The third-generation design enables lower forward voltage, reduced total capacitive charge, and minimized reverse current compared to previous generations.

What are the thermal operating limits?

The junction temperature range is -55 °C to +175 °C, with storage temperatures spanning the same range.