VN10KN3-G-P003

$0.46

Description：MOSFET N-CH 60V 310MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)

SKU:b621a268af82 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

VN10KN3-G-P003 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 60V 310MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for VN10KN3-G-P003

Description：MOSFET N-CH 60V 310MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for VN10KN3-G-P003

VN10KN3-G-P003

Single FETs, MOSFETs Overview

The VN10KN3-G-P003 is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 60V and a gate-to-source voltage rating of ±30V. The device operates within an ambient temperature range of -55°C to +150°C. Key electrical characteristics include a maximum static drain-to-source on-state resistance of 7.5Ω at VGS=5V and 5Ω at VGS=10V. Input capacitance is specified as 48pF typical, with turn-on and turn-off times limited to 10ns. The component is housed in a 3-lead TO-92 package.

Single FETs, MOSFETs Feature Summary

Vertical DMOS structure provides high input impedance and positive temperature coefficient for thermal stability
Free from secondary breakdown and thermally induced failure modes
Integral source-drain diode included for commutation applications
Low input capacitance enables fast switching speeds

Single FETs, MOSFETs Applications

Motor controls
Power supply circuits
Amplifiers
Switches
Drivers for relays, solenoids, and lamps

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix P003 corresponds to the required 2000-unit reel packaging configuration. Confirm RoHS compliance status and lead-free designation during procurement. Ensure the selected variant matches the intended through-hole mounting requirements for the TO-92 package. Cross-reference the full part number against current Microchip documentation to validate active status and availability.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low threshold voltage and high breakdown voltage capabilities. The vertical DMOS technology offers power handling comparable to bipolar transistors while maintaining MOS input characteristics. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Evaluate the on-state resistance requirements against the available gate drive voltages to ensure optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to the VN10K family of N-Channel Enhancement-Mode Vertical DMOS FETs. The family utilizes a silicon-gate manufacturing process to achieve high gain and excellent thermal stability. Variants within the series share similar electrical profiles but differ in packaging options and media types such as bags or reels.