Diode Arrays VS-6CWQ10FNTRRHM3 product image

VS-6CWQ10FNTRRHM3

$0.67
  • Description:DIODE ARRAY SCHOT 100V 3.5A DPAK
  • Series:-

SKU:68807c2fe631 Category: Brand:

  
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VS-6CWQ10FNTRRHM3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY SCHOT 100V 3.5A DPAK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-6CWQ10FNTRRHM3

  • Description:DIODE ARRAY SCHOT 100V 3.5A DPAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):3.5A
  • Voltage - Forward (Vf) (Max) @ If:810 mV @ 3 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 100 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA (DPAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for VS-6CWQ10FNTRRHM3

VS-6CWQ10FNTRRHM3

Diode Arrays Overview

The VS-6CWQ10FNTRRHM3 is a high-performance surface mount Schottky rectifier manufactured by Vishay Semiconductors. It features a center tap configuration with dual anodes and a common cathode, housed in a DPAK (TO-252AA) package. The device provides a maximum average forward current of 7 A per device (3.5 A per leg) and withstands a maximum DC reverse voltage of 100 V. Key electrical characteristics include a low forward voltage drop of 0.81 V at 3 A and 25 °C, and a maximum non-repetitive surge current of 440 A. It operates within a junction temperature range of -40 to 150 °C.

Diode Arrays Feature Summary

  • Center tap configuration with dual anodes and common cathode for efficient power conversion
  • Guard ring structure designed to enhance ruggedness and ensure long-term reliability
  • AEC-Q101 qualified for automotive applications and meets JESD 201 class 2 whisker test requirements
  • Low forward voltage drop optimized for high frequency operation and reduced power loss

Diode Arrays Applications

  • Disk drives
  • Switching power supplies
  • Converters
  • Freewheeling diodes
  • Battery charging circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix TRR indicates right-oriented tape and reel packaging when sourcing this component. Confirm that the M3 suffix denotes compliance with RoHS standards, halogen-free material composition, and lead-free terminations. Ensure the selected variant matches the required quantity per reel specifications provided in the manufacturer's ordering information table.

Diode Arrays Selection Notes

Select this component for designs requiring a compact surface mount solution with high current density capabilities. The DPAK outline offers a small footprint suitable for space-constrained PCB layouts. Consider the thermal resistance characteristics and allowable case temperatures when designing heat dissipation strategies for continuous operation at rated currents.

Diode Arrays Part Context

This part belongs to Vishay's High Performance Schottky Rectifier series, specifically the 6CWQ10 base model family. The 'FN' designation identifies the TO-252AA package style, while 'H' confirms AEC-Q101 qualification. The 'M3' suffix specifies environmental compliance including lead-free terminations. This series is engineered for applications demanding low forward voltage drops and robust performance under varying thermal conditions.

Diode Arrays Replacement Considerations

VS-6CWQ10FNHM3

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy per leg is rated at 5 mJ when tested at TJ = 25 °C with IAS = 1 A and L = 10 mH.

How does the forward voltage drop vary with temperature?

At 3 A, the forward voltage drop decreases from 0.81 V at 25 °C to 0.63 V at 125 °C, demonstrating the typical negative temperature coefficient of Schottky barriers.

Is this component suitable for high-frequency switching applications?

Yes, the datasheet explicitly lists high frequency operation as a feature, supported by a typical junction capacitance of 92 pF per leg measured at VR = 5 VDC.

VS-6CWQ10FNTRRHM3VS-6CWQ10FNTRRHM3
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