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VS-ST380CH04C0L is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 400V 2220A TO200AB. Review the specifications below when checking this part for your BOM.
The VS-ST380CH04C0L is a single Silicon Controlled Rectifier (SCR) module from the Vishay VS-ST380CH series, designed for industrial phase control applications. It features an E-PUK (TO-200AB) metal case with a ceramic insulator and utilizes a center amplifying gate structure. The device supports a maximum repetitive peak off-state voltage of 400 V and an average on-state current of 960 A at 80 °C heatsink temperature. It operates within a junction temperature range of -40 °C to +150 °C.
Verify component authenticity through authorized Vishay channels or certified distributors. Confirm that the specific ordering suffix matches the required terminal configuration and voltage rating. Ensure compliance with RoHS directives as defined in the manufacturer's material categorization documentation before procurement.
Evaluate thermal management requirements based on single-side or double-side cooling configurations. Verify that the gate drive circuitry meets the specified trigger voltage and current limits across the full operating temperature range. Ensure the application does not exceed the maximum non-repetitive surge current or I²t ratings during fault conditions.
This component belongs to the VS-ST380CH series of phase control thyristors manufactured by Vishay Semiconductors. The series offers various voltage codes and terminal options within the standardized E-PUK package, providing a scalable solution for high-power industrial switching applications requiring robust thermal performance.
Consult the official datasheet for alternative part numbers within the same series that may offer different voltage ratings or terminal styles. Cross-reference specifications carefully to ensure compatibility with existing thermal and electrical constraints.
The typical turn-off time (tq) is 100 µs under standard test conditions.
Yes, it utilizes a center amplifying gate design to improve triggering reliability.
The maximum critical rate of rise of off-state voltage (dV/dt) is 500 V/µs.
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