Single FETs, MOSFETs XP10TN010CMT product image

XP10TN010CMT

$0.48
  • Description:MOSFET N CH 100V 17A PMPAK5X6
  • Series:XP10TN010C
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR)

SKU:17e68be0ad2f Category: Brand:

  
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XP10TN010CMT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N CH 100V 17A PMPAK5X6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for XP10TN010CMT

  • Description:MOSFET N CH 100V 17A PMPAK5X6
  • Series:XP10TN010C
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:65.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Ta), 41.6W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PMPAK (5x6)
  • Package / Case:8-PowerLDFN

Single FETs, MOSFETs datasheet and documents for XP10TN010CMT

XP10TN010CMT

Single FETs, MOSFETs Overview

The XP10TN010CMT is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features a PMPAK5x6 surface-mount package and supports SMD/SMT installation. The device has a drain-source breakdown voltage of 100 V and a continuous drain current rating of 17 A. Its maximum on-resistance is 10 mOhms, with a gate-source voltage limit of 20 V and a threshold voltage of 4 V. The total gate charge is 20 nC, and power dissipation reaches 3 W. Operating temperatures range from -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration for efficient switching applications
  • Low on-resistance design for reduced conduction losses
  • High thermal stability suitable for demanding environments

Single FETs, MOSFETs Applications

  • Power management circuits
  • DC-DC converter modules
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with YAGEO XSemi before integration. Confirm that the PMPAK5x6 footprint matches your PCB layout requirements. Ensure thermal management solutions align with the specified power dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rated single N-channel MOSFET with low on-resistance is required in a compact PMPAK5x6 package. Consider the 17 A current capability and 3 W power dissipation against your thermal design constraints. Verify compatibility with standard 20 V gate drive signals.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSemi. These components utilize advanced silicon processing to achieve low on-resistance and high efficiency. The series targets cost-effective solutions for various power conversion and switching applications across industrial and consumer electronics sectors.

Single FETs, MOSFETs Replacement Considerations

Consult official YAGEO XSemi documentation for verified substitute part numbers within the same series or equivalent specifications.

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