1N3647

Single Diodes Overview

The Microchip Technology 1N3647 is a high voltage standard recovery rectifier diode qualified to MIL-PRF-19500/279. It features a working peak reverse voltage of 2500 V and an average rectified forward current of 0.25 A at 55 °C, reducing to 0.10 A at 100 °C. The device utilizes voidless hermetically sealed glass construction with tungsten slugs for thermal stability. Electrical characteristics include a minimum breakdown voltage of 3600 V, a maximum forward voltage of 5.0 V at 250 mA, and a maximum reverse leakage current of 5 µA at the rated working peak reverse voltage.

Single Diodes Feature Summary

• Hermetically sealed voidless hard glass package with tungsten slugs for robustness.
• Qualified to MIL-PRF-19500/279 standards for JAN and JANTX reliability levels.
• Triple-layer passivation ensures absolute high voltage and temperature stability.
• Inherently radiation hard as described in Microsemi MicroNote 050.

Single Diodes Applications

• High voltage standard recovery rectification circuits.
• Military and other high-reliability applications where failure cannot be tolerated.
• Bridges, half-bridges, catch diodes, and voltage multipliers.
• X-ray machines, power supplies, transmitters, and radar equipment.

Single Diodes Procurement Notes

Verify that the specific order includes the required military qualification level (JAN or JANTX), as these are only available for the 1N3644 through 1N3647 part numbers. Confirm RoHS compliance status, noting that compliant versions are available on commercial grade only. Ensure the ordering suffix matches the desired termination finish and packaging configuration.

Single Diodes Selection Notes

Select the 1N3647 when a working peak reverse voltage of 2500 V is required alongside a 0.25 A average rectified current rating. Consider this component for environments demanding extreme radiation hardness and high-temperature operation up to 175 °C. Verify that the thermal resistance and surge current capabilities align with the specific circuit load requirements.

Single Diodes Part Context

The 1N3647 belongs to the 1N3643–1N3647 series of voidless hermetically sealed high voltage rectifiers. This series is designed for critical applications requiring high reliability and stability under harsh conditions. The device shares mechanical and electrical design principles with the 1N4254–1N4257 and 1N5181–1N5184 series, differing primarily in voltage ratings and current capacities.

Single Diodes Replacement Considerations

Direct substitutes within the same family include the 1N4257, which shares identical voltage and current ratings but may differ in specific military qualification levels. Verify compatibility regarding package dimensions and terminal finishes before substitution.

Single Diodes FAQ

Is the 1N3647 inherently radiation hard?

Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.

What is the maximum junction temperature for the 1N3647?

The maximum junction and storage temperature range is -65 °C to +175 °C.