Single Diodes 1N3880 product image

1N3880

$3.48
  • Description:DIODE STANDARD 100V 6A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk

SKU:51664879afac Category: Brand:

  
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1N3880 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD 100V 6A DO4. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N3880

  • Description:DIODE STANDARD 100V 6A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):6A
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 6 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):200 ns
  • Current - Reverse Leakage @ Vr:15 µA @ 50 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Supplier Device Package:DO-4
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for 1N3880

1N3880

Single Diodes Overview

The GeneSiC Semiconductor 1N3880 is a silicon fast recovery rectifier diode housed in a DO-4 (DO-203AA) stud mount package. It features a repetitive peak reverse voltage of 100 V and a continuous forward current rating of 6 A. The device exhibits a maximum forward voltage of 1.4 V at 6 A and a maximum reverse recovery time of 200 ns. It supports an operating junction temperature range from -55 °C to +150 °C with a thermal resistance of 2.5 °C/W.

Single Diodes Feature Summary

  • High surge capability for robust transient handling
  • Stud mount configuration for efficient heat dissipation
  • Fast recovery characteristics suitable for high-speed switching

Single Diodes Applications

  • Industrial power conversion systems
  • General purpose rectification circuits
  • Freewheeling applications in motor drives

Single Diodes Procurement Notes

Verify the specific polarity variant required, as standard units feature a cathode stud while 'R' suffix devices have reversed polarity with an anode stud. Confirm that the mounting surface preparation meets the thermal interface requirements for the specified 2.5 °C/W junction-to-case resistance. Ensure the application environment remains within the -55 °C to +150 °C operating temperature limits to maintain device reliability.

Single Diodes Selection Notes

Select this component when a 100 V blocking voltage and 6 A continuous current are required in a stud-mount form factor. The 200 ns recovery time makes it appropriate for general industrial frequencies rather than high-frequency RF applications. Consider the 'R' variant if the circuit design necessitates an anode-connected base instead of the standard cathode connection.

Single Diodes Part Context

This part belongs to the 1N3879 through 1N3883 series of silicon fast recovery diodes. All members share identical physical dimensions, thermal characteristics, and current ratings, differing only in their voltage blocking capabilities ranging from 50 V to 400 V. The series utilizes a standardized DO-4 metal case construction.

Single Diodes Replacement Considerations

Cross-reference with other manufacturers offering DO-4 stud mount fast recovery diodes rated at 100 V and 6 A. Verify that any substitute matches the 200 ns maximum reverse recovery time and 1.4 V forward voltage specifications to ensure circuit compatibility.

1N38801N3880
$3.48
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