1N4007T-G

Single Diodes Overview

The Comchip Technology 1N4007T-G is a standard recovery rectifier diode housed in the DO-41-2 through-hole package. It features a maximum repetitive peak reverse voltage of 1 kV and an average forward current rating of 1 A. The device exhibits a maximum forward voltage of 1.1 V at 1 A and a maximum non-repetitive peak forward surge current of 30 A. Reverse leakage current is limited to 5 µA. Operating temperatures range from -55 °C to +150 °C.

Single Diodes Feature Summary

• Glass passivated junction construction for enhanced reliability
• High current capability with low forward voltage drop
• Low leakage current characteristics

Single Diodes Applications

• General purpose rectification in power supplies
• Polarity protection circuits
• DC-to-AC conversion stages

Single Diodes Procurement Notes

Verify the specific manufacturer part number against official Comchip Technology documentation to confirm the DO-41-2 package and glass passivation details. Ensure the procurement specification matches the required 1 kV reverse voltage and 1 A current ratings for the intended circuit application.

Single Diodes Selection Notes

Select this component for applications requiring robust standard recovery performance in through-hole designs. Consider the thermal limits and surge current capacity when designing for high-load environments or transient conditions.

Single Diodes Part Context

This component belongs to the 1N4007 series of silicon rectifiers, widely used for general-purpose AC to DC conversion. The 'G' suffix typically denotes glass passivation, while 'T' indicates tape-and-reel packaging within the DO-41 form factor.

Single Diodes Replacement Considerations

Cross-reference with other manufacturers offering 1N4007 variants in DO-41 packages. Verify that substitute parts meet the same 1 kV reverse voltage and 1 A forward current specifications.