1N4150TR_S00Z

Single Diodes Overview

The onsemi 1N4150TR_S00Z is a high conductance ultra fast silicon signal diode housed in the DO-35 axial leaded package. It features a working inverse voltage of 50 V and an average rectified current rating of 200 mA. The device exhibits a breakdown voltage of 75 V at 5.0 μA reverse current, with a maximum reverse leakage current of 100 nA at 25°C and 100 μA at 150°C. Electrical characteristics include a forward voltage ranging from 540 mV to 1.0 V depending on current levels, a diode capacitance of 2.5 pF, and a reverse recovery time between 4.0 ns and 6.0 ns.

Single Diodes Feature Summary

• High conductance design optimized for efficient signal switching applications
• Ultra-fast reverse recovery performance suitable for high-speed circuits
• Robust thermal stability supporting operation up to 175°C junction temperature

Single Diodes Applications

• High-speed switching circuits
• Signal processing systems
• General purpose rectification tasks

Single Diodes Procurement Notes

Verify that the specific suffix S00Z aligns with the required packaging configuration, as standard datasheets may reference generic reel or cut tape formats. Confirm the manufacturer origin, noting historical Fairchild Semiconductor data, as onsemi acquired these assets. Ensure the component meets the necessary environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Single Diodes Selection Notes

Select this component when circuit requirements demand low forward voltage drop combined with rapid switching speeds. The DO-35 package provides reliable through-hole mounting for standard PCB layouts. Consider the 200 mA average current limit and 50 V reverse voltage rating to ensure adequate headroom for the specific operating conditions and surge currents expected in the target application design.

Single Diodes Part Context

This part belongs to the 1N4150 series of high conductance ultra fast diodes. Originally characterized by Fairchild Semiconductor, the product line continues under onsemi manufacturing. The device utilizes silicon epitaxial planar technology within a glass-sealed DO-35 case, offering high reliability and consistent electrical performance across the specified industrial temperature range.

Single Diodes Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements must match the 50 V reverse voltage, 200 mA current rating, and DO-35 package dimensions to ensure mechanical and electrical compatibility without redesigning the host circuit board.

Single Diodes FAQ

What is the maximum junction temperature for the 1N4150?

The maximum operating junction temperature is 175°C.

How does the reverse recovery time vary with current?

The reverse recovery time ranges from 4.0 ns at lower currents (10 mA to 200 mA) to 6.0 ns at higher currents (200 mA to 400 mA).