1N4153 TR

Single Diodes Overview

The Central Semiconductor Corp 1N4153 TR is a silicon rectifier diode designed for general-purpose applications. It features a single element configuration housed in the DO-35 glass axial leaded package. The device supports a maximum average forward rectified current of 0.15 A and withstands a maximum repetitive peak reverse voltage of 75 V. It operates within a junction temperature range of -65 °C to +200 °C, with a maximum power dissipation of 0.5 W.

Single Diodes Feature Summary

• Utilizes high-reliability silicon construction for robust performance
• Features an isolated case connection suitable for heat sinking or mounting requirements
• Encapsulated in a round-end glass body for environmental protection

Single Diodes Applications

• General purpose rectification circuits
• Computer logic interface diodes
• Signal processing applications requiring fast recovery

Single Diodes Procurement Notes

Verify the specific manufacturer designation when sourcing, as the 1N4153 part number is utilized by multiple semiconductor producers including Microchip Technology and ROHM. Confirm that the component matches the Central Semiconductor Corp specification sheet regarding the DO-35 package and electrical ratings. Ensure the 'TR' suffix corresponds to the required tape and reel packaging format if automated assembly is intended.

Single Diodes Selection Notes

Select this component for designs requiring a standard axial leaded rectifier with a 75 V reverse voltage rating. The 0.15 A current capacity defines its suitability for low-power signal switching rather than high-current power conversion. Consider the 200 °C maximum operating temperature for environments exceeding standard industrial limits.

Single Diodes Part Context

This component belongs to the broader family of small-signal silicon rectifiers characterized by axial glass encapsulation. Similar devices often share the DO-35 footprint but may vary significantly in voltage and current ratings. The 1N4153 serves as a foundational discrete semiconductor element for basic circuit protection and signal direction control.