1N4248

1N4248

$3.18
  • Description:DIODE STANDARD 800V 1A AXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:f1039855b3ab Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 800V 1A AXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):5 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 800 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:A, Axial
  • Supplier Device Package:A, Axial
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N4248

Overview

The Microchip Technology 1N4248 is a general-purpose silicon rectifier diode designed for through-hole mounting. It features a single-element configuration with a maximum repetitive peak reverse voltage of 800V and an average forward rectified current rating of 1A. The device utilizes a DO-41 (DO-204AL) plastic axial leaded package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 25A, a maximum DC reverse leakage current of 1µA, and a typical reverse recovery time of 2µs. The component operates within a junction temperature range from -65°C to +175°C.

Feature Summary

  • High voltage capability up to 800V for robust reverse blocking performance
  • Monolithic non-cavity construction ensuring superior thermal shock resistance
  • Glass passivated junction providing low reverse leakage current stability
  • Fused metal oxide hermetic seal for enhanced environmental durability

Applications

  • General purpose rectification in power supply circuits
  • Free wheeling diode applications in inductive load switching
  • Computer logic interface protection
  • Signal processing circuits requiring fast recovery characteristics

Procurement Notes

Verify the specific manufacturer source when ordering, as the 1N4248 designation is utilized by multiple semiconductor producers including GE, Semtech, and Vishay. Confirm that the received component matches the required DO-41 package dimensions and lead form. Ensure compliance with project specifications regarding RoHS status, as historical data indicates some variants may not be compliant. Cross-reference datasheets for exact reverse leakage and recovery time tolerances before final integration.

Selection Notes

Select this component for applications requiring high voltage isolation combined with moderate current handling capabilities. The 800V rating provides significant safety margin over standard 600V alternatives. Consider the 2µs reverse recovery time for switching frequencies where standard slow recovery diodes would cause excessive losses. The DO-41 package facilitates easy manual or automated through-hole assembly. Evaluate thermal management requirements based on the 1A continuous current rating and ambient operating conditions.

Part Context

The 1N4248 belongs to the family of general-purpose silicon rectifiers characterized by high voltage ratings and reliable switching performance. It serves as a standard solution for converting AC to DC in low-to-medium power applications. The device's glass passivation technology distinguishes it from unpassivated counterparts by offering improved stability against humidity and chemical exposure. Its widespread adoption stems from the balance between cost-effectiveness and robust electrical specifications suitable for industrial and consumer electronics.

FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 25A.

Does the 1N4248 feature a glass passivated junction?

Yes, the device utilizes a glass passivated junction to ensure low reverse leakage current.

What is the typical reverse recovery time for this diode?

The typical reverse recovery time is specified as 2µs.

1N42481N4248
$3.18
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