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1N4448,143
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Product Detailed Parameters
- Description：DIODE STANDARD 100V 200MA ALF2
- Series：-
- Mfr：NXP USA Inc.
- Package：Cut Tape (CT),Tape & Box (TB)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：25 nA @ 20 V
- Capacitance @ Vr, F：4pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：ALF2
- Operating Temperature - Junction：200°C (Max)
- Grade：-
- Qualification：-
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Overview
The 1N4448 is a high-speed switching diode fabricated in planar technology and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. It features a maximum repetitive peak reverse voltage of 100 V and a continuous forward current rating of 200 mA. The device exhibits a maximum reverse recovery time of 4 ns and a typical junction capacitance of 4 pF at 1 MHz. Forward voltage ranges from 0.62 V to 0.72 V at 5 mA, with a non-repetitive peak forward current capability of up to 4 A for 1 µs pulses.
Feature Summary
- Hermetically sealed leaded glass SOD27 (DO-35) package
- High switching speed with max 4 ns reverse recovery time
- General application suitability for fast switching circuits
Applications
- High-speed switching applications
Procurement Notes
Verify the manufacturer status carefully, as the original NXP Standard Product business was transferred to Nexperia on February 7, 2017. Ensure that any documentation referencing NXP or Philips Semiconductors is interpreted according to the official transition notice directing users to Nexperia resources. Confirm the specific ordering suffix matches the required package variant before finalizing procurement orders.
Selection Notes
Select this component when a hermetically sealed axial leaded package is required for high-speed signal processing. The 100 V reverse voltage rating makes it suitable for general-purpose switching tasks where low leakage and fast recovery are critical. Consider the thermal resistance characteristics if operating near ambient temperature limits.
Part Context
This part belongs to the 1N4148/1N4448 family of high-speed diodes produced by NXP Semiconductors. These devices share similar planar technology fabrication methods but differ slightly in forward voltage specifications. The 1N4448 is specifically characterized for its distinct forward voltage range compared to the standard 1N4148 variant.
Replacement Considerations
The 1N4148 is a direct functional substitute within the same datasheet specification. Verify package compatibility and forward voltage requirements when substituting.
