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1N4619UR/TR is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 3V 500MW DO213AA. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N4619UR/TR is a glass surface mount Zener voltage regulator in the DO-213AA (SOD80/MLL34) MELF package. It provides a nominal Zener voltage of 3.0 V at a test current of 250 µA with a standard tolerance of ±5%. The device features a maximum Zener impedance of 1600 Ω and a maximum reverse leakage current of 1.0 µA. It operates within a temperature range of -65°C to +175°C, dissipates up to 0.5 W, and includes a tape-and-reel option for automated assembly.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and termination finish. Confirm RoHS compliance status if required by the application. Ensure the procurement channel is authorized to guarantee component authenticity and traceability. Check for availability of the tape-and-reel packaging format versus bulk options.
Select this component when a hermetically sealed surface mount Zener diode is required for high reliability applications. Consider the 3.0 V nominal voltage and 1600 Ω impedance for circuit design. Evaluate the thermal resistance and power derating curves for proper heat dissipation on the PCB. Verify that the operating temperature range meets the environmental requirements.
This part belongs to the 1N4614UR through 1N4627UR series of 0.5 Watt glass surface mount Zeners. These devices serve as surface mount equivalents to JEDEC registered axial-leaded parts. The series offers voltages from 1.8 to 100 V with standard 5% tolerances. Military qualified versions are available with internal metallurgical bonds.
Equivalent axial-leaded parts include the 1N4619. Surface mount alternatives in the same series are 1N4618UR and 1N4620UR. Verify pinout compatibility and thermal performance when substituting.
The maximum reverse leakage current is 1.0 µA.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050.
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