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1N5230C-TAP is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ZENER 4.7V 500MW DO204AH. Review the specifications below when checking this part for your BOM.
The Vishay General Semiconductor - Diodes Division 1N5230C-TAP is a silicon planar power Zener diode housed in the DO-35 (DO-204AH) axial leaded package. It provides a nominal Zener voltage of 4.7 V with a tight tolerance of ± 2 %, indicated by the 'C' suffix. The device operates at a test current of 20 mA and dissipates up to 500 mW of power. Key electrical characteristics include a maximum reverse leakage current of 5 µA, a dynamic resistance of 19 Ω, and a temperature coefficient of 0.03 %/K.
Verify that the specific ordering code matches the required tolerance level, as the 'C' suffix denotes ± 2 % accuracy compared to standard variants. Confirm the TAP packaging format aligns with assembly requirements. Ensure compliance with RoHS standards and material categorization definitions provided in official documentation before finalizing procurement.
Select this component when precise voltage regulation is critical due to its narrow ± 2 % tolerance band. The DO-35 package offers reliable axial mounting for through-hole applications. Evaluate the 500 mW power dissipation limit against expected operating conditions to ensure safe thermal equilibrium during continuous use.
This part belongs to the 1N5221 to 1N5267 series of small signal Zener diodes manufactured by Vishay Semiconductors. The series covers a wide range of nominal voltages from 2.4 V to 75 V. The 1N5230 variant specifically targets the 4.7 V segment within this extensive lineup of silicon planar devices.
Compatible substitutes include other manufacturers' 1N5230B or 1N5230C equivalents in the DO-35 package. Cross-reference dynamic resistance and leakage current specifications to ensure functional parity in sensitive voltage reference designs.
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