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25AA160C-I/SN is listed in the Memory IC range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is IC EEPROM 16KBIT SPI 10MHZ 8SOIC. Review the specifications below when checking this part for your BOM.
The Microchip Technology 25AA160C-I/SN is a 16 Kbit Serial Electrically Erasable PROM featuring a 2048 x 8-bit organization. It operates via an SPI-compatible serial bus with a maximum clock frequency of 10 MHz at VCC ≥ 4.5V. The device supports a supply voltage range of 1.8V to 5.5V and utilizes a 16-byte page size for write operations. It is housed in an 8-lead SOIC package and functions within an industrial temperature range of -40°C to +85°C.
Verify that the specific ordering suffix matches the required package type and temperature grade. Confirm the 'C' designation indicates the 16-byte page size variant rather than the 32-byte 'D' version. Ensure the voltage range requirements align with the 1.8V minimum specification for the AA series.
Select this component when low-voltage operation down to 1.8V is required alongside standard SPI compatibility. The Industrial temperature grade (-40°C to +85°C) suits general commercial and industrial environments. Consider the 16-byte page size constraint for write algorithms compared to larger page variants.
This part belongs to the 25XX160C/D family of 16 Kbit Serial EEPROMs from Microchip Technology. The 'AA' prefix denotes the 1.8V compatible voltage range, distinguishing it from the 2.5V minimum 'LC' series. The 'SN' suffix specifies the 8-lead Small Outline Integrated Circuit (SOIC) package format.
25AA160DT-I/SN
The HOLD pin suspends transmission to the device while in the middle of a serial sequence. Transitions on SI, SCK, and SO are ignored until HOLD is released, allowing the host to service higher priority interrupts without retransmitting the sequence.
The primary difference is the page size for write operations. The 25AA160C features a 16-byte page size, whereas the 25AA160D features a 32-byte page size. Both share the same memory organization and electrical characteristics.
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