2DA1774S-7-F

Single Bipolar Transistors Overview

The Diodes Incorporated 2DA1774S-7-F is a PNP small signal bipolar junction transistor (BJT) housed in an SOT-523 surface-mount package. It features a collector-emitter voltage of -50 V, a collector-base voltage of -60 V, and a continuous collector current of -150 mA. The device has a power dissipation rating of 150 mW at +25°C and operates within a temperature range of -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 270 at -1 mA and -6 V, a saturation voltage of -0.5 V at -50 mA, and a transition frequency of 140 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes an ultra-small SOT-523 molded plastic case for compact surface-mount integration.
• Provides high DC current gain with a minimum specification of 270 under standard test conditions.
• Complies with JEDEC standards for high reliability and is fully RoHS compliant.
• Designed as a complementary counterpart to the NPN 2DC4617 series.

Single Bipolar Transistors Applications

• General-purpose switching applications requiring low-power PNP control.
• Signal amplification circuits utilizing small-signal characteristics.
• Automotive electronic systems compatible with AEC-Q101 qualification requirements.
• Portable consumer electronics benefiting from the miniature SOT-523 footprint.

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required electrical binning, as variations exist within the family. Ensure compliance with relevant environmental directives and quality standards applicable to the intended deployment environment before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a minimum hFE of 270 is required in an SOT-523 package. Consider the -50 V collector-emitter voltage limit and -150 mA current capacity against circuit demands. Evaluate thermal resistance and power dissipation constraints if operating near maximum ratings or elevated ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2DA1774Q/R/S series of 60V PNP small signal transistors manufactured by Diodes Incorporated. The 'S' suffix specifically denotes the high-gain binning variant within this product line. The series shares mechanical dimensions and general electrical limits but differs in current gain specifications across Q, R, and S designations.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same manufacturer family include the 2DA1774Q-7-F and 2DA1774R-7-F. These alternatives share identical packaging and maximum ratings but offer different DC current gain ranges. Verify that the alternative gain bin meets the specific circuit requirements before substitution.

Single Bipolar Transistors FAQ

What is the status of the 2DA1774S-7-F?

According to the official datasheet, the 2DA1774S-7-F is listed as Obsolete.

What is the ESD protection rating for this device?

The device supports a Human Body Model (HBM) rating of 4,000 V (JEDEC Class 3A) and a Machine Model (MM) rating of 400 V (JEDEC Class C).

How does the 2DA1774S-7-F differ from the 2DA1774R-7-F?

The primary difference is the DC current gain (hFE). The 2DA1774S-7-F has a minimum hFE of 270, whereas the 2DA1774R-7-F has a minimum hFE of 180.