2N4416

Jfets Overview

The Vishay Siliconix 2N4416 is an N-channel Junction Field-Effect Transistor (JFET) designed for high-frequency amplification. It features a Gate-Source Breakdown Voltage of -30 V and a minimum Forward Transconductance of 4.5 mS. The device operates with a Saturation Drain Current of 5 mA and exhibits low noise characteristics, including an Equivalent Input Noise Voltage of 6 nV/√Hz at 1 kHz. It supports an Operating Junction Temperature range from -55°C to +150°C.

Jfets Feature Summary

• Designed for high-performance amplification at high frequencies
• Hermetically sealed TO-206AF (TO-72) package available for military processing
• Very low noise and distortion characteristics
• High AC/DC switch off-isolation capability

Jfets Applications

• High-frequency amplifier/mixer designs
• Oscillator circuits
• Sample-and-hold applications
• Very low capacitance switches

Jfets Procurement Notes

Verify the specific ordering suffix against the datasheet to confirm package type and processing level. The standard 2N4416 designation corresponds to the TO-206AF metal can package. Confirm that the required variant meets the necessary environmental or military specifications if applicable to the design constraints.

Jfets Selection Notes

Select this component when low noise and high gain are critical in RF applications. The 2N4416 offers a higher breakdown voltage compared to the SST4416 variant. Ensure the circuit design accommodates the hermetically sealed package requirements if utilizing the TO-206AF configuration for ruggedized environments.

Jfets Part Context

This part belongs to the Vishay Siliconix family of N-channel JFETs, which also includes the 2N4416A and SST4416 variants. These devices share similar electrical performance profiles but differ in packaging options and specific voltage ratings. The 2N4416 specifically utilizes the TO-206AF package, distinguishing it from surface-mount alternatives within the same product folder.

Jfets Replacement Considerations

The 2N4416A serves as a direct functional replacement with a higher Gate-Source Breakdown Voltage of -35 V. The SST4416 provides equivalent electrical characteristics in a SOT-23 surface-mount package.