2SB1457(T6CNO,A,F)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1457(T6CNO,A,F) is a silicon PNP epitaxial type Darlington transistor housed in a JEDEC TO-92MOD package. It features a collector-emitter voltage rating of -100 V and a DC collector current capacity of -2 A. The device provides a minimum DC current gain (hFE) of 2000 at -1 A and maintains a maximum collector-emitter saturation voltage of -1.5 V under specified test conditions.

Single Bipolar Transistors Feature Summary

• High DC current gain capability with a minimum hFE of 2000
• Low collector-emitter saturation voltage for efficient switching
• Epitaxial PNP Darlington configuration

Single Bipolar Transistors Applications

• Micro motor drive applications
• Hammer drive applications
• Power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking the lot number marking on the component body, as indicated in the datasheet. Confirm that the ordering suffix matches the required environmental compliance specifications. Ensure the supplier provides official Toshiba documentation to validate authenticity and traceability before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical requirements for power switching or amplification tasks. Consider the TO-92MOD package constraints and the -100 V voltage rating against circuit demands. Evaluate thermal management needs based on the 900 mW power dissipation limit and safe operating area curves provided in the technical specifications.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SB series of PNP transistors, specifically designed as an epitaxial type Darlington structure. It is engineered for robust performance in general electronics applications, offering reliable operation within standard industrial and consumer equipment environments while adhering to specific electrical characteristics defined by the manufacturer.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without validating pinouts, electrical ratings, and package dimensions against the original specifications.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) specified for the 2SB1457?

The minimum DC current gain (hFE) is 2000, measured at a collector-emitter voltage of -2 V and a collector current of -1 A.

What is the maximum collector-emitter breakdown voltage (V(BR)CEO)?

The maximum collector-emitter breakdown voltage is -100 V, tested with a collector current of -10 mA and base current open.

Is the 2SB1457 suitable for use in nuclear facilities or medical equipment?

No, the product is not intended for unintended uses such as nuclear facilities, medical equipment, or aerospace applications unless explicitly permitted by Toshiba.