2SB1690TL

Single Bipolar Transistors Overview

The 2SB1690TL is a PNP bipolar junction transistor manufactured by Rohm Semiconductor, designed for surface-mount applications. It features a collector-emitter voltage of 12 V and supports a maximum continuous collector current of 2 A. The device offers a transition frequency of 360 MHz and a power dissipation rating of 1 W. Key electrical parameters include a DC current gain (hFE) of at least 270 at 200 mA and a saturated collector-emitter voltage of 180 mV at 50 mA base current and 1 A collector current. It operates within a temperature range of -55 °C to +150 °C junction temperature.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a transition frequency of 360 MHz suitable for RF and high-frequency circuits.
• Robust current handling capacity supporting up to 2 A collector current in a compact package.
• Low saturation voltage ensures efficient power management and reduced heat generation during conduction.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Audio amplifier output stages
• DC-DC converter control loops

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging format. Confirm RoHS compliance status and flammability ratings against project requirements. Ensure the TSMT3 package dimensions align with PCB footprint constraints. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 12 V breakdown and 2 A current capacity is required in a small SMD form factor. Consider the 1 W power dissipation limit and thermal resistance characteristics for heat management. Compare the 360 MHz frequency response against application speed needs. Evaluate the hFE range for biasing stability in linear or switching modes.

Single Bipolar Transistors Part Context

This part belongs to Rohm's single PNP bipolar transistor lineup, utilizing silicon technology. It is housed in the TSMT3 (SC-96) surface-mount package, which provides a compact solution for space-constrained designs. The device is an active product intended for general electronic applications requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other PNP transistors with similar 12 V, 2 A, and TSMT3 package specifications. Verify pinout compatibility and thermal characteristics before substitution. Consult manufacturer cross-reference guides for approved alternative part numbers.