2SB772-R-BP

Single Bipolar Transistors Overview

The MCC 2SB772-R-BP is a PNP silicon plastic-encapsulated transistor designed for general-purpose switching applications. It features a collector current of 3.0 A and a collector-base voltage of 40 V, with a maximum power dissipation capability of 1.25 Watts. The device operates within a junction temperature range of -55°C to +150°C and meets UL 94 V-0 flammability standards for its epoxy encapsulation. Electrical characteristics include a DC current gain ranging from 60 to 400 depending on the specific rank, a transition frequency of 50 MHz, and low saturation voltages at specified currents.

Single Bipolar Transistors Feature Summary

• Utilizes a plastic-encapsulated construction that meets UL 94 V-0 flammability ratings for enhanced safety in various environments.
• Capable of handling a continuous collector current of 3.0 A while dissipating up to 1.25 Watts of power.
• Offers high reliability with an extended operating and storage junction temperature range spanning from -55°C to +150°C.

Single Bipolar Transistors Applications

• General-purpose electronic switching circuits
• Low-power amplifier stages
• Driver circuits for loads requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to ensure compliance with environmental regulations. Confirm whether the standard bulk packaging or halogen-free variants are required for your assembly process. Ensure procurement channels are authorized by Micro Commercial Components to guarantee part authenticity and traceability. Check for any recent revisions to the datasheet that may impact electrical parameters or mechanical dimensions before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when a robust PNP transistor with a 3.0 A current rating and 40 V breakdown voltage is needed. Consider the available hFE ranks (R, O, Y, GR) if specific current gain ranges are critical for circuit performance. Evaluate the thermal management requirements given the 1.25 W power dissipation limit and the TO-92 package style. Ensure the application does not involve life support systems without explicit written approval from the manufacturer.

Single Bipolar Transistors Part Context

This component belongs to the 2SB772 series of PNP silicon transistors manufactured by Micro Commercial Components. The series is characterized by its plastic encapsulation and suitability for through-hole mounting. It serves as a standard discrete semiconductor solution for general electronics, distinct from specialized high-frequency or high-voltage variants within the broader transistor market.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors offering similar 3.0 A current and 40 V voltage ratings. Verify pinout compatibility and physical dimensions to ensure direct replacement feasibility. Compare hFE gain ranges and saturation voltages to maintain circuit performance integrity.

Single Bipolar Transistors FAQ

What are the available hFE gain ranks for the 2SB772?

The device is classified into four gain ranks: R (60-120), O (100-200), Y (160-320), and GR (200-400).

Is the 2SB772-R-BP RoHS compliant?

Yes, the standard version features a lead-free finish and is RoHS compliant. Halogen-free versions are available upon request with the '-HF' suffix.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 40 Vdc when measured at IC=100uAdc and IE=0.