2SC1627A-Y,PASF(M

Description：TRANS NPN 80V 0.4A TO-92MOD
Series：-

SKU:ebf3fd5d0b04 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC1627A-Y,PASF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 80V 0.4A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC1627A-Y,PASF(M

Description：TRANS NPN 80V 0.4A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：400 mA
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 20mA, 200A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 2V
Power - Max：800 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC1627A-Y,PASF(M

2SC1627A-Y,PASF(M

Single Bipolar Transistors Overview

The Toshiba 2SC1627A-Y is an NPN silicon epitaxial planar transistor utilizing the PCT process, housed in a TO-92MOD package. It features a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 400 mA. The device provides a DC current gain (hFE) ranging from 120 to 240 for the 'Y' classification at 50 mA. With a transition frequency of 100 MHz and a power dissipation rating of 800 mW, it supports junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

Complementary pairing with the 2SA817A PNP transistor
Optimized driver-stage amplification capabilities
High-speed operation supported by 100 MHz transition frequency

Single Bipolar Transistors Applications

Driver-stage amplifier applications
Voltage amplifier circuits
General-purpose electronics equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm environmental compliance status, as markings indicate RoHS compatibility variations. Confirm the hFE binning classification required for the target circuit design. Review the manufacturer's reliability handbook regarding derating concepts before finalizing component selection for long-term deployment.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull stages requiring matched performance characteristics with the 2SA817A. Ensure the operating collector current remains within the 400 mA limit to maintain thermal stability. Verify that the 80 V breakdown voltage meets the peak voltage requirements of the intended amplifier topology.

Single Bipolar Transistors Part Context

This device belongs to the 2SC1627 series of general-purpose NPN transistors manufactured using Toshiba's epitaxial planar technology. It is engineered specifically for audio and signal processing applications where low distortion and high linearity are critical. The TO-92MOD package facilitates through-hole mounting for standard printed circuit board layouts.