2SC2229-O(SHP1,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:8937885c5f1c Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2229-O(SHP1,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-O(SHP1,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-O(SHP1,F,M

2SC2229-O(SHP1,F,M

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a collector-base voltage of 200 V. The device supports a maximum collector current of 50 mA with a power dissipation rating of 800 mW. Key electrical characteristics include a transition frequency of 120 MHz and a low output capacitance of 5.0 pF. The component operates within a junction temperature range up to 150 °C and is housed in a TO-92MOD package.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for high-voltage switching applications
Low output capacitance suitable for video output circuits
High transition frequency enabling efficient driver stage performance

Single Bipolar Transistors Applications

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific environmental compliance levels. Confirm the hFE classification suffix matches design requirements, noting that 'O' denotes a gain range of 70 to 140. Ensure the ordering suffix corresponds to the desired packaging and lot marking format before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation combined with moderate signal amplification. The TO-92MOD package facilitates through-hole mounting for general electronics. Consider the 800 mW power dissipation limit when designing thermal management solutions. Verify that the required DC current gain falls within the specified minimum threshold for the chosen application circuit.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup designed for general-purpose electronics. It utilizes a triple diffused structure to achieve stable performance across varying temperatures. The device serves as a standard solution for consumer electronics, specifically targeting television and audio equipment manufacturing where reliable switching and amplification are critical.