2SC2235-O(T6FJT,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-O(T6FJT,FM) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 800 mA. The device provides a DC current gain (hFE) ranging from 80 to 160 at a collector current of 100 mA. Its transition frequency is typically 120 MHz, with a collector output capacitance of 30 pF maximum. The component is housed in a JEDEC TO-92MOD package and supports a junction temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

• Designed for audio power amplifier and driver stage applications
• Complementary pairing available with the 2SA965 model
• Utilizes Toshiba's proprietary PCT manufacturing process

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific 'O' hFE classification (80 to 160) against circuit requirements. Confirm RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Ensure the TO-92MOD physical dimensions match the target PCB footprint before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate power handling is required for audio stages. The 120 V rating suits general-purpose switching and amplification tasks. Verify that the 900 mW power dissipation limit accommodates the thermal design constraints of the intended application environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of NPN transistors produced by Toshiba Semiconductor and Storage. The series utilizes an epitaxial structure optimized for audio performance. The specific suffix indicates the manufacturer's internal lot tracking and binning codes associated with the standard 2SC2235 product line.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. No other direct substitute part numbers are documented within the provided source material.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the 'O' classification?

For the 'O' classification, the minimum DC current gain (hFE) is 80 when tested at a collector current of 100 mA and a collector-emitter voltage of 5 V.

Is this transistor suitable for aerospace or medical equipment?

No. The documentation explicitly prohibits use in unintended applications such as aerospace, medical equipment, nuclear facilities, or transportation control systems due to reliability standards.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 120 V at an ambient temperature of 25°C.