2SC2482(FJTN,F,M)

Description：TRANS NPN 300V 0.1A TO-92MOD
Series：-

SKU:cce691f0f867 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SC2482(FJTN,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 300V 0.1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2482(FJTN,F,M)

Description：TRANS NPN 300V 0.1A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1V @ 1mA, 10mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 10V
Power - Max：900 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2482(FJTN,F,M)

2SC2482(FJTN,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2482 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 300 V and a maximum collector current of 100 mA. The device exhibits a typical collector output capacitance of 3.0 pF at 1 MHz and a transition frequency of 50 MHz. DC current gain ranges from 30 to 150 at 20 mA. Power dissipation is rated at 900 mW, with an operating junction temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

High-voltage switching capability with 300 V collector-emitter breakdown
Low collector output capacitance for high-frequency performance
Suitable for line-operated television horizontal driver circuits

Single Bipolar Transistors Applications

Color TV horizontal driver applications
Color TV chroma output applications
General high-voltage switching and amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation as requirements vary by production lot. Ensure storage conditions remain within specified limits to maintain reliability. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before implementation in final designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage isolation and low parasitic capacitance. The TO-92MOD package suits low-power discrete mounting needs. Evaluate thermal management requirements against the 900 mW dissipation limit. Consider the 50 MHz transition frequency for signal processing bandwidth constraints.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC series of NPN epitaxial transistors designed for general-purpose electronics. The series emphasizes robustness in consumer electronics like televisions and audio equipment. The specific model targets horizontal deflection drivers where high voltage handling is critical.