Single Bipolar Transistors 2SC2655-Y,WNLF(J product image

2SC2655-Y,WNLF(J

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-

SKU:97f5f57b598a Category: Brand:

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2SC2655-Y,WNLF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-Y,WNLF(J

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2655-Y,WNLF(J

2SC2655-Y,WNLF(J

Single Bipolar Transistors Overview

The Toshiba 2SC2655-Y is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It supports a maximum collector current of 2 A and a collector-emitter voltage of 50 V with a power dissipation rating of 900 mW. The 'Y' suffix designates a DC current gain (hFE) range of 120 to 240 at IC = 0.5 A. Key electrical characteristics include a low saturation voltage of 0.5 V max at 1 A, a transition frequency of 100 MHz, and a storage time of 1.0 μs typical.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient power switching
  • High-speed switching capability with short storage times
  • Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm environmental compliance status, such as RoHS compatibility or lead-free designation. Confirm that the TO-92MOD physical dimensions match the target PCB footprint requirements before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high collector current handling up to 2 A is required alongside low saturation voltage performance. The Y-grade binning provides higher DC current gain suitable for amplification tasks. Ensure thermal management accommodates the 900 mW dissipation limit within the operating temperature range.

Single Bipolar Transistors Part Context

This device belongs to the 2SC2655 series of NPN transistors manufactured by Toshiba Semiconductor and Storage. It is designed as a complementary pair to the 2SA1020, facilitating push-pull configurations in audio and power driver stages. The part utilizes a plastic encapsulated TO-92MOD form factor for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SA1020 serves as the direct complementary counterpart. Other potential replacements include BD517, BD525, 2SC3328, 2SC3669, 2SD1207, 2SD2177, and 3DK10C, subject to verification of pinout and electrical parameter alignment.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate in the 2SC2655-Y model?

The 'Y' suffix specifies the DC current gain (hFE) classification, indicating a minimum gain of 120 and a maximum of 240 when measured at a collector current of 0.5 A.

Is the 2SC2655 compatible with the 2SA1020?

Yes, the datasheet explicitly states that the 2SC2655 is complementary to the 2SA1020 PNP transistor, allowing them to be used together in matched pairs.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 50 V.

2SC2655-Y,WNLF(J2SC2655-Y,WNLF(J

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