Transistor, Photovoltaic Output Optoisolators 4N37M product image

4N37M

  • Description:OPTOISO 5KV TRANS W/BASE 6-DIP
  • Series:-
  • Mfr:Everlight Electronics Co Ltd
  • Package:Tube

SKU:2089c878d6b1 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

4N37M is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Everlight Electronics Co Ltd. Its product description is OPTOISO 5KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for 4N37M

  • Description:OPTOISO 5KV TRANS W/BASE 6-DIP
  • Series:-
  • Mfr:Everlight Electronics Co Ltd
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5000Vrms
  • Current Transfer Ratio (Min):100% @ 10mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):10µs, 9µs
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):80V
  • Current - Output / Channel:-
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):60 mA
  • Vce Saturation (Max):300mV
  • Operating Temperature:-55°C ~ 110°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.400", 10.16mm)
  • Supplier Device Package:6-DIP
  • Grade:-
  • Qualification:-

Transistor, Photovoltaic Output Optoisolators datasheet and documents for 4N37M

4N37M

Transistor, Photovoltaic Output Optoisolators Overview

The 4N37M is a transistor output optocoupler manufactured by Everlight Electronics Co Ltd. It consists of an infrared emitting diode optically coupled to a phototransistor with a base lead for enhanced switching performance. The device provides 5000Vrms isolation voltage and is housed in a standard 6-pin DIP package. Key electrical parameters include a maximum collector-emitter saturation voltage of 300mV and a minimum current transfer ratio of 100% at 10mA forward input current.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Integrates an infrared LED with a phototransistor featuring a base terminal for improved switching speed and gain control.
  • Provides high-voltage electrical isolation between input and output circuits.

Transistor, Photovoltaic Output Optoisolators Applications

  • Signal isolation in industrial control systems
  • Switching power supply feedback loops
  • Microcontroller interface circuits

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix (e.g., M, TB) against official datasheets to confirm pinout and packaging variations. Confirm active status as some variants may be discontinued. Ensure compliance with RoHS directives if required for your application.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when high isolation voltage and moderate switching speed are required. The base lead allows for better control over storage time compared to baseless phototransistors. Verify thermal management requirements for continuous operation.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the 4N3X series of general-purpose optocouplers. These devices are widely used for galvanic isolation in digital signal transmission. The 4N37M variant specifically includes a base connection on the phototransistor side.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Compatible substitutes include the 4N35 and 4N36 from various manufacturers, provided pinouts and electrical ratings match. Verify that replacement parts offer equivalent isolation voltage and current transfer ratios.

4N37M4N37M

Click on the inquiry

Recent News