7133LA20G

Overview

The Renesas Electronics Corporation 7133LA20G is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kbit, organized as 2k x 16 bits. The device features an asynchronous parallel interface with a maximum access time of 20 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a TQFP-100 package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two masters
• Asynchronous parallel interface for flexible system integration
• CMOS technology ensuring low power consumption during operation

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Real-time data acquisition and processing units

Procurement Notes

Verify the specific suffix G against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS compliance status and moisture sensitivity level requirements before procurement. Ensure the source component matches the exact part number to avoid functional mismatches in dual-port applications.

Selection Notes

Select this component when a 32 kbit dual-port SRAM with 20 ns access speed is required. The TQFP-100 package suits surface-mount designs needing moderate pin density. Verify that the 4.5 V to 5.5 V operating voltage aligns with the target system's power rails and that the industrial temperature range meets environmental constraints.

Part Context

This part belongs to the Renesas 7133LA series of dual-port SRAMs. The series offers various access speeds and packaging options to support diverse memory requirements. The LA variant typically denotes specific performance and package characteristics within the broader product family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference material. Consult official Renesas documentation for qualified replacements or cross-reference guides.