7133LA20JG

Overview

The Renesas Electronics Corporation 7133LA20JG is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits, organized as 2K words by 16 bits. The device features a parallel interface with a maximum access time of 20 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 100-TQFP package measuring 14x14 mm. The component is rated for an industrial operating temperature range from -55°C to +125°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data logging in industrial control units

Procurement Notes

Verify the specific suffix JG against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check current product lifecycle status as availability may be limited due to discontinuation notices.

Selection Notes

Select this component when a 32Kb dual-port SRAM with 20ns speed is required in a TQFP-100 package. Ensure the design accommodates the 4.5V to 5.5V supply range and the -55°C to +125°C temperature extremes. Verify that the parallel interface signals match the target system controller capabilities.

Part Context

This part belongs to the IDT7133SA/LA series of dual-port SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options for different performance and form factor requirements. The 7133LA variant specifically denotes the extended temperature range and lower speed grade compared to faster SA counterparts.

Replacement Considerations

Publicly confirmed substitutes include the 7133SA35PFG8 and 7133LA20PFG. Verify electrical specifications and package compatibility before substitution.