7133LA55PFI

Overview

The Renesas Electronics Corporation 7133LA55PFI is a static random-access memory (SRAM) integrated circuit featuring a storage capacity of 32 kbit organized as 2K x 16. It utilizes a parallel interface with an access time of 55 ns and operates within a supply voltage range of 4.5 V to 5.5 V. The device supports a maximum supply current of 140 mA and functions at temperatures between -40°C and +85°C. It is housed in a 52-pin TQFP surface-mount package.

Feature Summary

• Dual-port asynchronous SRAM architecture enabling independent simultaneous read/write operations by two masters.
• CMOS technology providing high-speed data access with low power consumption characteristics.
• Integrated internal master logic for simplified system integration and control.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data storage in industrial automation controllers

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements against project specifications, as this specific variant may not meet current environmental directives. Validate pin compatibility and electrical parameters against existing design schematics before procurement to ensure seamless integration into legacy or replacement hardware systems.

Selection Notes

Select this component when dual-port functionality is required for concurrent master access without external arbitration logic. The 55 ns speed suits moderate-to-high frequency applications. Ensure the design accommodates the 52-pin TQFP footprint and thermal dissipation needs associated with the specified operating temperature range and supply voltage constraints.

Part Context

This part belongs to the Renesas 7133 series of dual-port SRAMs, designed for applications requiring independent port access. It serves as a CMOS-based alternative to older bipolar technologies, offering improved power efficiency while maintaining robust data integrity for critical memory storage tasks in complex electronic systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with newer generation dual-port SRAMs from the manufacturer if direct substitution is required.