7133LA90J

Overview

The Renesas Electronics Corporation 7133LA90J is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kbit, organized as 2K x 16 bits. The device features asynchronous parallel interface operation with a maximum access time of 90 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports surface-mount installation in a 68-LCC package with J-leads.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two masters
• Asynchronous parallel interface for flexible system integration
• CMOS technology ensuring low power consumption during operation

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• Data storage in industrial control applications

Procurement Notes

Verify the specific suffix 'J' corresponds to the 68-LCC package variant when sourcing. Confirm RoHS compliance status as some legacy listings may indicate non-compliance. Check humidity sensitivity levels and reflow soldering profiles against current manufacturing standards before procurement.

Selection Notes

Select this component when dual-port functionality is required for concurrent read/write operations. Ensure the 90 ns access speed meets system timing requirements. Verify that the 68-pin LCC footprint fits the PCB layout constraints compared to TQFP alternatives.

Part Context

This part belongs to the 7133LA series of dual-port SRAMs from Renesas. It shares architectural similarities with other variants like the 7133LA70J but differs in access speed and packaging. The series is designed for applications requiring high-bandwidth memory sharing between multiple processing units.

Replacement Considerations

The IDT7133LA70J is a documented substitute offering faster 70 ns access in the same 68-PLCC package. Verify pin compatibility and timing parameters before substitution.