7143LA55G

Overview

The Renesas Electronics Corporation 7143LA55G is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kbit, organized as 2K x 16 words. The device features an asynchronous parallel interface with a maximum access time of 55 ns. It operates within a supply voltage range of 4.5 V to 5.5 V and supports through-hole mounting in a 68-pin PGA package.

Feature Summary

• Dual-port architecture enabling independent simultaneous access by two processors
• Asynchronous operation for flexible system integration without clock synchronization
• Parallel data interface supporting standard bus protocols

Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in microprocessor designs
• Data storage in industrial control applications

Procurement Notes

Verify component authenticity due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate pin compatibility and electrical specifications against target design parameters before procurement.

Selection Notes

Select this component for applications requiring independent dual-port access to shared memory resources. Ensure the design accommodates the 68-PGA through-hole package constraints. Verify that the 55 ns access speed meets system timing requirements.

Part Context

This component belongs to the Renesas 7133/7143 series of dual-port SRAMs. It serves as a high-performance memory solution for systems requiring concurrent read/write operations from multiple masters.

Replacement Considerations

Check for direct pin-compatible replacements or upgraded variants within the same manufacturer portfolio. Evaluate alternative dual-port SRAMs with similar access times and organization if sourcing is restricted.