7143LA55PF8

Overview

The Renesas Electronics Corporation 7143LA55PF8 is a dual-port static random-access memory (SRAM) integrated circuit. It features an 8K-bit storage capacity organized as 1K words by 8 bits. The device supports parallel interface communication with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and is housed in a 64-pin Thin Quad Flat Package (TQFP). This component is classified as volatile memory technology designed for asynchronous data handling.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two distinct processors or systems
• Asynchronous operation allowing flexible timing control without reliance on a global clock signal
• CMOS technology providing high-speed data transfer capabilities with low power consumption characteristics

Applications

• High-performance embedded systems requiring concurrent data processing
• Telecommunications equipment utilizing fast buffer memory
• Industrial automation controllers needing reliable volatile storage

Procurement Notes

Verify the exact package marking and manufacturer date code upon receipt, as this component may be sourced from surplus channels. Confirm RoHS compliance status against specific project requirements, as older manufacturing runs often differ from current standards. Ensure proper electrostatic discharge precautions are maintained during handling due to the sensitivity of CMOS structures. Cross-reference datasheet revisions to confirm pinout consistency before final integration into new designs.

Selection Notes

Select this component when a design requires independent read/write ports for separate master devices sharing a common memory space. The 55ns speed class suits applications where moderate latency is acceptable but cost efficiency is prioritized over ultra-high performance. Consider the TQFP package constraints regarding thermal dissipation and board space availability. Evaluate system voltage stability to ensure it remains strictly within the specified 4.5V to 5.5V operational window for reliable functionality.

Part Context

This part belongs to the broader family of dual-port SRAMs manufactured by Renesas Electronics, formerly Integrated Device Technology. These components are engineered to facilitate complex data exchange between multiple processors in real-time environments. The specific model represents a standard density option within the portfolio, balancing storage needs with physical footprint limitations typical of mid-range industrial and commercial electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific component were not identified in available documentation.