7143SA35J8

Overview

The Renesas Electronics Corporation 7143SA35J8 is a volatile Static Random Access Memory (SRAM) IC featuring dual-port asynchronous architecture. It provides a storage capacity of 32 kilobits organized as 4K words by 8 bits. The device utilizes a parallel interface with an access time and write cycle time of 35 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports surface mount installation in a 68-pin LCC (J-Lead) package.

Feature Summary

• Dual-port asynchronous architecture enabling simultaneous independent access to memory cells
• Parallel interface supporting high-speed data transfer operations
• Integrated automatic power-down functionality controlled by chip enable signals

Applications

• High-speed data buffering in embedded systems
• Cache memory implementation in microprocessor architectures
• Data storage for real-time processing applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements, as this specific variant may not meet current environmental standards. Validate package integrity and pin configuration against the 68-LCC specification before integration into final assemblies.

Selection Notes

Select this component when dual-port capability is required for concurrent master-slave memory operations. Ensure system design accommodates the 4.5V to 5.5V operating voltage range. Verify that the 68-pin LCC footprint matches the printed circuit board layout constraints.

Part Context

This part belongs to the 7143SA series of dual-port SRAMs manufactured by Renesas Electronics. It serves as a slave memory unit designed to operate alongside master dual-port devices in wider word width configurations. The series emphasizes error-free operation without additional discrete logic components.

Replacement Considerations

• 7143LA35J8