7143SA55PF

Overview

The Renesas Electronics Corporation 7143SA55PF is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 32 kilobits, organized as 2K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 55 nanoseconds. It operates within a supply voltage range of 4.5V to 5.5V and supports through-hole installation in a 100-pin Thin Quad Flat Package (TQFP). The component is rated for commercial operating temperatures between 0°C and 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports.

Applications

• High-speed data buffering in communication systems
• Cache memory implementation in embedded processors
• FIFO buffer applications in industrial automation

Procurement Notes

Verify the specific suffix 'PF' against official datasheets to confirm package type and pinout compatibility. Confirm RoHS compliance status as historical records indicate non-compliance for this series. Check for End-of-Life notices or discontinuance announcements from Renesas Electronics before procurement planning.

Selection Notes

Select this component when a dual-port SRAM solution with 32Kb capacity and 55ns speed is required. Ensure the design accommodates the 100-pin TQFP footprint and 4.5V-5.5V power supply constraints. Consider thermal management for the specified commercial temperature range during operation.

Part Context

This part belongs to the 7143SA family of dual-port SRAMs manufactured by Renesas Electronics. The family offers various speed grades and packaging options to suit different system requirements. The 7143SA55 variant specifically targets applications needing moderate speed performance with dual-port flexibility.

Replacement Considerations

Consult official substitution guides for compatible parts with matching pinouts and electrical characteristics. Verify that any replacement maintains the dual-port functionality and 32Kb capacity requirements.