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Product Detailed Parameters
- Description:IC SRAM 64KBIT PARALLEL 28CDIP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:64Kbit
- Memory Organization:8K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:15ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:-55°C ~ 125°C (TA)
- Mounting Type:Through Hole
- Package / Case:28-CDIP (0.300", 7.62mm)
- Supplier Device Package:28-CDIP
- Access Time:15 ns
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Overview
The Renesas Electronics Corporation 7164S15TDB is a static random-access memory (SRAM) integrated circuit with a storage capacity of 64K bits, organized as 8K words by 8 bits. It features an asynchronous parallel interface with a maximum access time of 15 nanoseconds. The device operates within a supply voltage range of 4.5V to 5.5V and is housed in a 28-pin Ceramic Dual In-Line Package (CDIP).
Feature Summary
- Asynchronous parallel memory architecture for flexible system integration.
- High-speed data retrieval capabilities with 15ns access time.
- Standard 5V logic operation compatible with conventional digital systems.
Applications
- Embedded memory storage in industrial control systems.
- Data buffering in telecommunications equipment.
- Cache memory solutions for legacy computing architectures.
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm package integrity and pin configuration match the 28-CDIP specification before integration. Review current lifecycle status and obsolescence notices to ensure long-term project viability and supply chain stability.
Selection Notes
Select this component when a robust, high-speed SRAM solution is required for 5V logic environments. The CDIP package offers superior thermal dissipation and mechanical durability compared to plastic variants, making it suitable for demanding operational conditions where signal integrity and physical resilience are critical design parameters.
Part Context
This part belongs to the 7164 series of asynchronous SRAMs from Renesas Electronics. The series provides reliable volatile memory solutions for various electronic applications requiring fast read and write cycles without complex synchronization protocols inherent in synchronous memory devices.
Replacement Considerations
Check for cross-reference part numbers such as IDT7164S15TDB which may offer equivalent electrical characteristics and pin compatibility. Ensure any substitute maintains the same 28-CDIP footprint and 15ns speed grade for seamless board replacement.
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