7164S20YG8

Overview

The Renesas Electronics Corporation 7164S20YG8 is a static random access memory (SRAM) integrated circuit with a storage capacity of 64K bits, organized as 8K words by 8 bits. It features an asynchronous parallel interface and a typical access time of 20 nanoseconds. The device operates within a supply voltage range of 4.5V to 5.5V and is housed in a 28-pin surface-mount SOJ package.

Feature Summary

• Asynchronous SRAM technology for volatile data storage
• Parallel interface architecture
• Surface-mount packaging configuration

Applications

• General-purpose memory buffering
• Data caching in embedded systems
• Industrial control applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance and moisture sensitivity level requirements during handling. Validate pinout compatibility with existing PCB layouts before integration into new designs.

Selection Notes

Select this component for legacy system maintenance requiring 64Kbit capacity. Ensure design supports 5V logic levels and 20ns timing constraints. Consider physical footprint differences when replacing older DIP variants with the SOJ form factor.

Part Context

This part belongs to the 7164 series of BICMOS static RAMs manufactured by Renesas Electronics. It serves as a high-speed memory solution for applications requiring fast read/write cycles without complex refresh logic inherent to DRAM technologies.

Replacement Considerations

• IDT7164S20YG8