7164S55TDB

Overview

The Renesas Electronics Corporation 7164S55TDB is a CMOS Static RAM with a capacity of 64K bits, organized as 8K words by 8 bits. It operates within a voltage range of 4.5V to 5.5V and features an access time of 55 ns. The component utilizes asynchronous parallel memory interface technology and is housed in a 28-CDIP package designed for through-hole mounting.

Feature Summary

• Asynchronous static random-access memory architecture
• CMOS technology implementation
• Parallel data interface configuration

Applications

• General-purpose volatile data storage
• Embedded system buffer memory
• Industrial control applications

Procurement Notes

Verify the current lifecycle status before procurement, as this component may be obsolete or restricted in certain regions. Confirm RoHS compliance requirements against specific project standards. Ensure the 28-CDIP package type matches the target PCB footprint and assembly capabilities. Validate that the 55 ns access time meets the system timing constraints.

Selection Notes

Select this part when a 64K-bit SRAM with 55 ns speed is required in a 28-pin ceramic dual in-line package. Consider the 4.5V to 5.5V supply voltage range compatibility with existing logic levels. Evaluate the through-hole mounting requirement against surface-mount alternatives if space is constrained.

Part Context

This device belongs to the 7164S series of high-speed static RAMs manufactured by Renesas Electronics. It serves as a legacy component for systems requiring reliable volatile memory storage in industrial or embedded environments. The CDIP package offers robust physical protection compared to plastic variants.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.