7164S70DB

Overview

The Renesas Electronics Corporation 7164S70DB is a 64Kbit (8K x 8) asynchronous static random-access memory (SRAM) IC. It features a parallel interface with a maximum access time of 70 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports through-hole mounting in a 28-CDIP package. It includes reduced power standby modes and battery backup data retention capabilities for low-power applications.

Feature Summary

• Asynchronous parallel SRAM architecture
• Reduced power standby mode operation
• Battery backup data retention capability

Applications

• Industrial control systems
• Telecommunications equipment
• Embedded storage buffers

Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm RoHS compliance status as the product lifecycle may affect regulatory adherence. Check for obsolescence notices or end-of-life announcements from the manufacturer. Ensure environmental operating temperatures match system requirements. Validate pin compatibility if replacing existing designs.

Selection Notes

Select this component for legacy designs requiring 64Kbit volatile memory with parallel interfaces. Consider the 70 ns access speed for moderate performance needs. Evaluate the 28-CDIP package for through-hole assembly constraints. Compare power consumption against active and standby modes for energy efficiency requirements.

Part Context

This part belongs to the 7164 series of high-speed SRAMs manufactured by Renesas Electronics. It is designed for applications requiring reliable data storage with fast access times. The series typically offers various speed grades and packaging options to suit different system architectures and form factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.