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Product Detailed Parameters
- Description:IC SRAM 18MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:512K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:5 ns
- Grade:-
- Qualification:-
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Overview
The Renesas 71T75602S100BGGI8 is a synchronous static random-access memory (SRAM) integrated circuit featuring Zero Bus Turnaround (ZBT) technology. It provides an 18Mb storage capacity organized as 512K words by 36 bits. The device operates with a maximum clock frequency of 100 MHz and achieves a typical access time of 5 ns. It utilizes a parallel interface and functions within a supply voltage range of 2.375V to 2.625V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm, suitable for surface mount applications across an industrial temperature range.
Feature Summary
- Supports high-speed data transfer via Zero Bus Turnaround (ZBT) architecture to minimize bus turnaround latency.
- Integrates Single Data Rate (SDR) operation synchronized with the system clock for predictable timing.
- Features a wide 36-bit data width to accommodate complex processing architectures efficiently.
Applications
- High-performance embedded systems requiring fast local memory access
- Network infrastructure equipment utilizing parallel data buses
- Industrial control units operating under strict timing constraints
Procurement Notes
Verify the specific suffix 'BGGI8' against official Renesas documentation to confirm lead-free status and moisture sensitivity level. Confirm availability status as this part number may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints for the 119-PBGA package before procurement.
Selection Notes
Select this component when a 36-bit data path is required alongside synchronous ZBT performance at 100 MHz. Compare against other members of the 71T75602 family if different access speeds or packaging options are needed. Ensure the design supports the specified 2.5V core voltage requirements and thermal dissipation needs for the PBGA form factor.
Part Context
This device belongs to the Renesas 71T75602 series of synchronous SRAMs. The series offers various speed grades and packaging options to support diverse embedded memory needs. The 71T75602S100BGGI8 specifically targets applications needing moderate speed with a wide data bus in a compact ball grid array format.
Replacement Considerations
Consult official Renesas substitution guides for compatible alternatives. Verify pinout and electrical specifications match exactly before replacing. Other speed variants within the same series may require timing adjustments.
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