71T75802S150BG

71T75802S150BG

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:850ae7fda69f Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.8 ns
  • Grade:-
  • Qualification:-

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71T75802S150BG

Overview

The 71T75802S150BG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features an 18-megabit storage capacity organized as 1 million words by 18 bits. The device operates with a maximum clock frequency of 150 MHz and achieves a typical access time of 3.8 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 2.375V to 2.625V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It supports an industrial operating temperature range of 0°C to 70°C.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
  • Internally synchronized output buffer enable removes the need for external OE control.
  • Single R/W control pin simplifies interface logic requirements.
  • Positive clock-edge triggered registers support fully pipelined applications.

Applications

  • High-performance embedded systems requiring fast data buffering
  • Network infrastructure equipment
  • Industrial automation controllers
  • Telecommunications base stations

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and moisture sensitivity level handling procedures before assembly. Check for specific RoHS compliance variations across production lots. Ensure design-in compatibility with existing board layouts and power delivery networks. Validate replacement availability if long-term supply assurance is required.

Selection Notes

Select this part when ZBT performance is critical for system throughput. Compare access times against alternative speeds within the 71T75802 family. Verify package dimensions match PCB footprint constraints. Consider thermal dissipation requirements for the PBGA configuration. Evaluate power consumption profiles against system energy budgets.

Part Context

This component belongs to the 71T75802 series of synchronous SRAMs designed for high-speed data processing. The series offers various speed grades and packaging options to suit different application needs. It represents a transition product in Renesas's memory portfolio, combining legacy IDT technology with modern manufacturing processes.

Replacement Considerations

  • 71T75802S133BG
  • 71T75802S166BG

71T75802S150BG71T75802S150BG

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