71T75802S150BG

Overview

The IDT71T75802S150BG is a synchronous ZBT SRAM with an 18Mb capacity organized as 1M x 18. It operates at a clock frequency of 150 MHz with a 3.8 ns access time. The device uses a 2.5V core supply and supports parallel interface communication. It is housed in a 119-ball BGA package measuring 14x22 mm. The component functions within a temperature range of 0°C to 70°C.

Feature Summary

• Supports high-performance system speeds through zero wait state burst operations
• Features internally synchronized output buffers to eliminate external control requirements
• Provides individual byte write control for flexible data management

Applications

• High-speed digital signal processing systems
• Network infrastructure equipment requiring low-latency memory
• Embedded storage solutions for telecommunications hardware

Procurement Notes

Verify the specific suffix BG against official Renesas documentation to confirm the 119-ball BGA package configuration. Confirm RoHS compliance status as legacy IDT products may not meet current environmental standards. Check for active obsolescence notices or end-of-life notifications from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 18Mb synchronous SRAM with 150 MHz performance is required. Ensure the design accommodates the 119-ball BGA footprint and 2.5V power domain. Compare against the S150PF variant if a TQFP package is preferred for assembly constraints.

Part Context

This part belongs to the IDT 71T75 series of synchronous ZBT SRAMs, designed for high-throughput applications. The series includes various density and speed grades, utilizing a common architecture optimized for pipelined data transfer. The manufacturer transitioned from IDT to Renesas Electronics, maintaining technical continuity across the product line.

Replacement Considerations

IDT71T75802S150PF offers identical electrical specifications but utilizes a 100-pin TQFP package instead of the BGA form factor.