71T75802S200BGG

Memory IC Overview

The Renesas 71T75802S200BGG is an 18Mbit (1M x 18) Synchronous SRAM IC utilizing Zero Bus Turnaround (ZBT) technology. It operates at a maximum clock frequency of 200 MHz with a 3.2 ns access time. The device features a parallel interface and requires a supply voltage between 2.375V and 2.625V. It is housed in a 119-pin PBGA package.

Memory IC Feature Summary

• Eliminates dead bus cycles during read-to-write or write-to-read transitions via ZBT architecture
• Supports high-speed synchronous data transfer with single-cycle turnaround capability
• Designed for low-power operation within a 2.5V core voltage range

Memory IC Applications

• High-performance embedded systems requiring fast cache memory
• Network infrastructure equipment
• Industrial control systems

Memory IC Procurement Notes

Verify the specific suffix BGG to confirm the 119-pin PBGA package configuration, as other suffixes indicate different form factors. Confirm RoHS compliance status and lead-free certification requirements against current manufacturing standards. Ensure the operating temperature range meets system environmental specifications before procurement.

Memory IC Selection Notes

Select this component when a 200 MHz synchronous SRAM with ZBT functionality is required for 1M x 18 data width applications. Compare against lower-speed variants like the 133 MHz or 166 MHz models if power consumption or thermal constraints are critical. Ensure the PCB layout supports the PBGA footprint and signal integrity requirements for high-frequency parallel interfaces.

Memory IC Part Context

This part belongs to the Renesas 71T75802S series of Zero Bus Turnaround SRAMs. The series offers various speed grades and packaging options to suit different performance and physical space requirements in embedded memory applications.

Memory IC Replacement Considerations

Equivalent parts include the IDT71T75802S200BGG. Verify pin compatibility and electrical characteristics before substitution.