71V016SA10BFG

Overview

The Renesas Electronics 71V016SA10BFG is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM). It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 10 ns. The device supports a maximum standby current of 150 µA and an active current of up to 160 mA. It is housed in a 48-pin CABGA package and is designed for surface-mount installation.

Feature Summary

• Asynchronous parallel interface architecture requiring no clock signals or refresh cycles
• Low power consumption with dedicated standby mode capabilities
• CMOS technology ensuring high-speed data retrieval

Applications

• Industrial equipment control systems
• Telecommunications infrastructure
• Consumer electronics devices

Procurement Notes

Verify the specific suffix BFG against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Ensure the selected variant matches the required operating temperature range and package dimensions for your PCB layout. Confirm availability status directly with authorized distributors as lead times may vary.

Selection Notes

Select this component when a 64K by 16-bit organization is required for fast, non-volatile data storage applications. Consider the 10 ns access speed and 3.3 V nominal supply voltage requirements. Evaluate the 48-pin CABGA package constraints against your board space limitations and thermal management needs.

Part Context

This part belongs to the IDT 71V016SA series of high-speed CMOS SRAMs. Originally developed by Integrated Device Technology, the product line was acquired by Renesas Electronics. The series is characterized by its low power operation and compatibility with standard 3.3 V logic levels.

Replacement Considerations

Check for direct cross-reference part numbers from Renesas or other manufacturers offering identical 64K x 16, 10 ns specifications in a 48-pin CABGA package. Verify pin-to-pin compatibility before substitution.