71V016SA12BFG

Overview

The IDT71V016SA12BFG is a high-speed asynchronous static random-access memory (SRAM) manufactured by Integrated Device Technology. It features a memory density of 1 Megabit, organized as 64K words by 16 bits. The device supports a maximum access time of 12 nanoseconds and operates on a single 3.3V power supply. It utilizes a parallel interface for data input and output. The component is housed in a 48-pin Plastic Ball Grid Array (PBGA) package with a standard JEDEC footprint.

Feature Summary

• Asynchronous operation without requiring an external clock signal
• Single 3.3V voltage supply for simplified power design
• Parallel data interface supporting standard bus architectures

Applications

• High-speed cache memory systems
• Buffer storage in telecommunications equipment
• Data acquisition systems requiring fast random access

Procurement Notes

Verify the specific suffix 'BFG' to confirm the 48-pin PBGA package configuration and lead-free status. Cross-reference the manufacturer's official datasheet for the IDT71V016 series to ensure compatibility with system voltage requirements and timing constraints. Confirm availability through authorized distributors as this component may be subject to discontinuation notices.

Selection Notes

Select this component when a 1Mb capacity with 16-bit width is required at 12ns speed. Ensure the PCB layout accommodates the 48-pin BGA package. Verify that the system logic levels are compatible with the 3.3V I/O specifications. Consider thermal dissipation requirements associated with the PBGA form factor during integration.

Part Context

This part belongs to the IDT71V016 family of asynchronous SRAMs. The family offers various speed grades and packaging options to suit different performance and space constraints. The 71V016SA variant specifically denotes the 3.3V operation mode within this product line.

Replacement Considerations

Check for direct replacements from Renesas Electronics, which acquired IDT's standard products. Verify equivalent pinouts and electrical characteristics before substituting.