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Product Detailed Parameters
- Description:IC SRAM 1MBIT PARALLEL 48CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:1Mbit
- Memory Organization:64K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:20ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-LFBGA
- Supplier Device Package:48-CABGA (7x7)
- Access Time:20 ns
- Grade:-
- Qualification:-
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Overview
The 71V016SA20BFI8 is a 1 Mbit (64 K x 16) asynchronous static random-access memory manufactured by Renesas Electronics. It operates within a voltage range of 3.0 V to 3.6 V, with a maximum supply current of 120 mA. The device features a 20 ns access time and supports parallel interface communication. It is designed for surface-mount installation in a 48-pin CABGA package. The component functions reliably across an extended industrial temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous single-data-rate SRAM architecture providing non-clock-dependent data access.
Applications
- Industrial equipment requiring reliable volatile memory storage.
Procurement Notes
Verify the specific suffix BFI8 against official Renesas documentation to confirm the exact package type and temperature grade. Confirm RoHS compliance status as indicated in the datasheet. Check for end-of-life notices or obsolescence warnings prior to procurement decisions.
Selection Notes
Select this component when a 64 K x 16 organization is required with a 20 ns speed grade. Ensure the design accommodates the 3.3 V nominal supply voltage and the physical constraints of the 48-lead CABGA footprint. Verify thermal management capabilities for the specified operating temperature range.
Part Context
This part belongs to the 71V016SA series of high-performance asynchronous SRAMs. It serves as a volatile memory solution for embedded systems needing fast random access without complex clock synchronization overheads typical of synchronous memories.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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