71V124SA12YGI8

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:7e97d91e4b3a Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：1Mbit
Memory Organization：128K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：12ns
Voltage - Supply：3V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package：32-SOJ
Access Time：12 ns
Grade：-
Qualification：-

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71V124SA12YGI8

Overview

The 71V124SA12YGI8 is a 1-Mbit (128K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V. The device features a 12 ns access time and utilizes a parallel interface. It is housed in a 32-pin Small Outline J-Lead (SOJ) package, specifically identified as 32-BSOJ with a width of 10.16mm. The component supports surface-mount installation and functions within an operating temperature range of -40°C to +85°C.

Feature Summary

Utilizes fully static asynchronous circuitry that eliminates the need for external clocks or periodic refresh cycles.
Features JEDEC center power and ground pinout architecture to reduce noise generation and improve system performance.
All bidirectional inputs and outputs are LVTTL-compatible for direct interfacing with standard logic families.

Applications

High-speed data buffering in embedded systems
Cache memory implementation in industrial control units
Data storage in telecommunications equipment

Procurement Notes

Verify component authenticity through authorized distributors due to discontinuation status. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Ensure replacement parts match the specific suffix for package and temperature grade compatibility.

Selection Notes

Select this part for applications requiring fast asynchronous access without clock synchronization. The 3.3V CMOS technology ensures low power consumption compared to older generations. Verify that the 32-SOJ footprint fits the target PCB layout constraints.

Part Context

This component belongs to the 71V124 series of 3.3V CMOS SRAMs. It is designed for high-reliability applications where data retention and speed are critical. The series is known for its robustness in industrial and commercial environments.

Replacement Considerations

Officially recommended substitutes include AS7C31025B-12JINTR from Alliance Memory. Verify pinout compatibility and electrical specifications before integration.